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IRFUC20PBF

IRFUC20PBF

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IRFUC20PBF

IRFUC20PBF

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Part No :

IRFUC20PBF

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 600V 2A TO251AA
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12965 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 19 - May 23 2024
PDF
IRFUC20PBF PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.4Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251AA
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
IRFUC20PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFUC20PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFUC20PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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