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IPP045N10N3GXKSA1

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Part No :: IPP045N10N3GXKSA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 100V 100A TO220-3

Catalog: Transistors - FETs, MOSFETs - Single

Availability: 19602 pieces

Shipped from: HK warehouse

Expected Shipping Date: May 20 - May 24 2024

PDF: IPP045N10N3GXKSA1 PDF

Type	Description
Series:	OptiMOS™
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:	117 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	8410 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	214W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO220-3
Package / Case:	TO-220-3

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