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IRLU3636PBF

IRLU3636PBF

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Part No :

IRLU3636PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 50A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12545 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 20 - May 24 2024
PDF
IRLU3636PBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:3779 pF @ 50 V
FET Feature:-
Power Dissipation (Max):143W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
IRLU3636PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRLU3636PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRLU3636PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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