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TK6Q60W,S1VQ

TK6Q60W,S1VQ

MOSFET N-CH 600V 6.2A IPAK

TK6Q60W,S1VQ

TK6Q60W,S1VQ

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Part No :

TK6Q60W,S1VQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 600V 6.2A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
468046 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 08 - Jun 12 2024
PDF
TK6Q60W,S1VQ PDF
Type Description
Series:DTMOSIV
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:820mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:3.7V @ 310µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:390 pF @ 300 V
FET Feature:Super Junction
Power Dissipation (Max):60W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Stub Leads, IPak
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