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TP65H035WS

TP65H035WS

Image is for reference, please contact us to get the real picture

Part No :

TP65H035WS

Manufacturer
Transphorm
Description
GANFET N-CH 650V 46.5A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10136 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 20 - May 24 2024
PDF
TP65H035WS PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):12V
Rds On (Max) @ Id, Vgs:41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 400 V
FET Feature:-
Power Dissipation (Max):156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
TP65H035WS is available at GangBo-ic.com, Please review product page below for detailed information, including TP65H035WS price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TP65H035WS to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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