







TVS DIODE 30V 48.4V PLAD
CONN HEADER SMD 22POS 1.27MM
CONN D-SUB HOUSING RCPT 8POS
FIXED IND 10UH 355MA 2.58 OHM TH
| Type | Description |
|---|---|
| Series: | Military, MIL-PRF-19500 |
| Package: | Bulk |
| Part Status: | Active |
| Type: | Zener |
| Unidirectional Channels: | - |
| Bidirectional Channels: | 1 |
| Voltage - Reverse Standoff (Typ): | 30V |
| Voltage - Breakdown (Min): | 33.3V |
| Voltage - Clamping (Max) @ Ipp: | 48.4V |
| Current - Peak Pulse (10/1000µs): | 309A |
| Power - Peak Pulse: | 15000W (15kW) |
| Power Line Protection: | No |
| Applications: | General Purpose |
| Capacitance @ Frequency: | - |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | Nonstandard SMD |
| Supplier Device Package: | PLAD |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
JTXV1N6155Semtech |
T MET BI 1500W 27.4V HRV |
|
|
SMCJ78CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
MXLSMCGLCE130AE3Roving Networks / Microchip Technology |
TVS DIODE 130V 209V DO215AB |
|
|
MAP6KE9.1AE3Roving Networks / Microchip Technology |
TVS DIODE 7.78V 13.4V T-18 |
|
|
1N6470USRoving Networks / Microchip Technology |
TVS DIODE 6V 11V GMELF |
|
|
M1.5KE7.5AE3Roving Networks / Microchip Technology |
TVS DIODE 6.4V 11.3V CASE-1 |
|
|
MXP6KE16ARoving Networks / Microchip Technology |
TVS DIODE 13.6V 22.5V T-18 |
|
|
MXLPLAD18KP9.0ARoving Networks / Microchip Technology |
TVS DIODE 90V 146V PLAD |
|
|
MXLSMLG58CAE3Roving Networks / Microchip Technology |
TVS DIODE 58V 93.6V DO215AB |
|
|
SMCJ48AHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
M1.5KE300CARoving Networks / Microchip Technology |
TVS DIODE 256V 414V CASE-1 |
|
|
SMCJ10CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
MXSMCG75CARoving Networks / Microchip Technology |
TVS DIODE 75V 121V DO215AB |