Type | Description |
---|---|
Series: | - |
Package: | Box |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 1.21A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.4 V @ 968 mA |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | - |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | -55°C ~ 200°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SE10FJHM3/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO219AB |
|
RFUH10NS6STLROHM Semiconductor |
DIODE GEN PURP 600V 10A LPDS |
|
CDBA2100LR-HFComchip Technology |
DIODE SCHOTTKY 100V 2A DO214AC |
|
FR605-TRectron USA |
DIODE FAST 600V 6A R-6 |
|
CDBFR70Comchip Technology |
DIODE SCHOTTKY 70V 70MA 1005 |
|
1N4944GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
VS-307U160Vishay General Semiconductor – Diodes Division |
DIODE GP 1.6KV 330A DO205AB |
|
TSDGLW RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A SOD123W |
|
UPS120EE3/TR7Roving Networks / Microchip Technology |
DIODE SCHOTTKY 20V 1A POWERMITE1 |
|
RS07D-M-18Vishay General Semiconductor – Diodes Division |
DIODE GP 200V 500MA DO219AB |
|
DSR01S30SL,L3FToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 30V 100MA SL2 |
|
SS210L R3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 2A SUB SMA |
|
SS1P5L-M3/84AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 1A DO220AA |