DIODE SCHOTTKY 120V 30A TO262AA
Type | Description |
---|---|
Series: | TMBS® |
Package: | Tube |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 120 V |
Current - Average Rectified (Io): | 30A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 30 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 500 µA @ 120 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262AA |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SS29L RQGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 90V 2A SUB SMA |
|
CDBB140-GComchip Technology |
DIODE SCHOTTKY 40V 1A DO214AA |
|
CMR1U-02 TR13 PBFREECentral Semiconductor |
DIODE GEN PURP 200V 1A SMB |
|
UF1005-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 600V 1A DO41 |
|
ST10150SMC Diode Solutions |
DIODE SCHOTTKY 150V TO220AC |
|
CDBA560-HFComchip Technology |
DIODE SCHOTTKY 60V 5A DO214AC |
|
RGL1MDiotec Semiconductor |
DIODE FR DO-213AA 1000V 1A |
|
VS-16FLR10S02Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 16A DO203AA |
|
NSB8BTHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 8A TO263AB |
|
VS-MBRD320TR-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 3A 20V DPAK |
|
UF1DLW RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A SOD123W |
|
LSM145 MELFRoving Networks / Microchip Technology |
DIODE SCHOTTKY 45V 1A DO213AB |
|
IDH02G120C5XKSA1IR (Infineon Technologies) |
DIODE SCHOT 1200V 2A TO220-2-1 |