







DIODE GEN PURP 50V 3A DO201AD
BF513 - RF SMALL SIGNAL FIELD-EF
CLEANING BOX STANDARD TYPE
CAP 2000F 0% +20% 2.7V CHAS MT
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tape & Box (TB) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 50 V |
| Current - Average Rectified (Io): | 3A |
| Voltage - Forward (Vf) (Max) @ If: | 1 V @ 3 A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 5 µA @ 50 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | Through Hole |
| Package / Case: | DO-201AD, Axial |
| Supplier Device Package: | DO-27 (DO-201AD) |
| Operating Temperature - Junction: | -65°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
SL22PL-TPMicro Commercial Components (MCC) |
2A,20V,SCHOTTKY,SOD-123FL PACKAG |
|
|
TSSA3U60 M2GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 3A DO214AC |
|
|
S1MSWFQ-7Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 1KV 1A SOD123F |
|
|
BAS21-E3-08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 200MA SOT23 |
|
|
MBRM130LT3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 1A POWERMITE |
|
|
FR156GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1.5A DO204AC |
|
|
RS2BHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1.5A DO214AA |
|
|
NTE6009NTE Electronics, Inc. |
R-400V 40A FAST REC AK |
|
|
GN3MSURGE |
3A -1000V - SMC (DO-214AB) - REC |
|
|
MUR2100ERochester Electronics |
RECTIFIER DIODE |
|
|
VS-T40HFL20S02Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 40A D-55 |
|
|
MURA230T3GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 300V 2A SMA |
|
|
BYG22DHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 2A DO214AC |