







MEMS OSC XO 166.6660MHZ LVCMOS
DIODE GEN PURP 400V 3A DO214AB
TERM BLK 2P TOP ENTRY 7.5MM PCB
POT 1K OHM 2W PLASTIC LINEAR
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 400 V |
| Current - Average Rectified (Io): | 3A |
| Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 3 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 50 ns |
| Current - Reverse Leakage @ Vr: | 10 µA @ 400 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AB, SMC |
| Supplier Device Package: | DO-214AB |
| Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
1N5391GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1.5A DO204AC |
|
|
RGL34BHE3/83Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 500MA DO213 |
|
|
VS-1N1206RAVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 12A DO203AA |
|
|
S3KHR7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 3A DO214AB |
|
|
ES2G-M3/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 2A DO214AA |
|
|
SB5100E-GComchip Technology |
DIODE SCHOTTKY 100V 5A DO201AD |
|
|
1N6479HE3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO213AB |
|
|
NSR02100HT1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 200MA SOD323 |
|
|
US1DHM2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AC |
|
|
VS-2EGH02-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 2A DO214AA |
|
|
1N5391GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1.5A DO204AC |
|
|
S10M-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 1KV 10A DO214AB |
|
|
PT800MDiotec Semiconductor |
DIODE STD TO-220AC 1000V 8A |