







 
                            DIODE ZENER 6.2V 500MW DO35
 
                            .050 (1.27) SOCKET DISCRETE CABL
| Type | Description | 
|---|---|
| Series: | Military, MIL-PRF-19500/127 | 
| Package: | Bulk | 
| Part Status: | Active | 
| Voltage - Zener (Nom) (Vz): | 6.2 V | 
| Tolerance: | ±1% | 
| Power - Max: | 500 mW | 
| Impedance (Max) (Zzt): | 7 Ohms | 
| Current - Reverse Leakage @ Vr: | 5 µA @ 3.5 V | 
| Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 200 mA | 
| Operating Temperature: | -65°C ~ 175°C | 
| Mounting Type: | Through Hole | 
| Package / Case: | DO-204AH, DO-35, Axial | 
| Supplier Device Package: | DO-35 | 
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|   | SZMM5Z6V8ST5GSanyo Semiconductor/ON Semiconductor | DIODE ZENER 6.8V 500MW SOD523 | 
|   | JANTX1N6325USRoving Networks / Microchip Technology | DIODE ZENER 11V 500MW MELF | 
|   | JANTX1N4133UR-1Roving Networks / Microchip Technology | DIODE ZENER 87V 500MW DO213AA | 
|   | MMSZ4716-TPMicro Commercial Components (MCC) | DIODE ZENER 39V 500MW SOD123 | 
|   | 1SMA4759HM2GTSC (Taiwan Semiconductor) | DIODE ZENER 62V 1.25W DO214AC | 
|   | BZG04-9V1-HM3-18Vishay General Semiconductor – Diodes Division | DIODE ZENER 11V 1.25W DO214AC | 
|   | SZBZX84B3V3LT1GSanyo Semiconductor/ON Semiconductor | DIODE ZENER 3.3V 250MW SOT23-3 | 
|   | JAN1N968CUR-1Roving Networks / Microchip Technology | DIODE ZENER 20V 500MW DO213AA | 
|   | 1N5923BP-TPMicro Commercial Components (MCC) | DIODE ZENER 8.2V 1.5W DO-41 | 
|   | 1N4763AHR0GTSC (Taiwan Semiconductor) | DIODE ZENER 91V 1W DO204AL | 
|   | BZX84C8V2-HE3-08Vishay General Semiconductor – Diodes Division | DIODE ZENER 8.2V 300MW SOT23-3 | 
|   | MM3Z20VT1GSanyo Semiconductor/ON Semiconductor | DIODE ZENER 20V 300MW SOD323 | 
|   | UFZVFHTE-1712BROHM Semiconductor | DIODE ZENER 12V 500MW UMD2 |