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EMF18XV6T5G

EMF18XV6T5G

Image is for reference, please contact us to get the real picture

Part No :

EMF18XV6T5G

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL BIPOLAR TRANSISTOR,
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
272000 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 14 - May 18 2025
PDF
EMF18XV6T5G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V, 60V
Resistor - Base (R1):47kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V / 120 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:140MHz
Power - Max:500mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
EMF18XV6T5G is available at GangBo-ic.com, Please review product page below for detailed information, including EMF18XV6T5G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EMF18XV6T5G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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