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RN1965FE(TE85L,F)

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Part No :: RN1965FE(TE85L,F)

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: TRANS 2PNP PREBIAS 0.1W ES6

Catalog: Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Availability: 10176 pieces

Shipped from: HK warehouse

Expected Shipping Date: Jul 07 - Jul 11 2025

PDF: RN1965FE(TE85L,F) PDF

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Obsolete
Transistor Type:	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	2.2kOhms
Resistor - Emitter Base (R2):	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	250MHz
Power - Max:	100mW
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	ES6

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