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EMD9T2R

EMD9T2R

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EMD9T2R

EMD9T2R

Image is for reference, please contact us to get the real picture

Part No :

EMD9T2R

Manufacturer
ROHM Semiconductor
Description
TRANS NPN/PNP PREBIAS 0.15W EMT6
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
664466 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 25 - Oct 29 2025
PDF
EMD9T2R PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:250MHz
Power - Max:150mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:EMT6
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