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EMD4T2R

EMD4T2R

Image is for reference, please contact us to get the real picture

Part No :

EMD4T2R

Manufacturer
ROHM Semiconductor
Description
TRANS NPN/PNP PREBIAS 0.15W EMT6
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
19204 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 07 - May 11 2025
PDF
EMD4T2R PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):47kOhms, 10kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:250MHz
Power - Max:150mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:EMT6
EMD4T2R is available at GangBo-ic.com, Please review product page below for detailed information, including EMD4T2R price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EMD4T2R to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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