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NSV40301MDR2G

NSV40301MDR2G

SMALL SIGNAL BIPOLAR TRANSISTOR

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NSV40301MDR2G

NSV40301MDR2G

Image is for reference, please contact us to get the real picture

Part No :

NSV40301MDR2G

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Arrays
Availability
14837 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 05 - May 09 2025
PDF
NSV40301MDR2G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:2 NPN (Dual)
Current - Collector (Ic) (Max):3A
Voltage - Collector Emitter Breakdown (Max):40V
Vce Saturation (Max) @ Ib, Ic:115mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 2A, 2V
Power - Max:653mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
NSV40301MDR2G is available at GangBo-ic.com, Please review product page below for detailed information, including NSV40301MDR2G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NSV40301MDR2G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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