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BFR181E6327

BFR181E6327

LOW-NOISE TRANSISTOR

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BFR181E6327

BFR181E6327

Image is for reference, please contact us to get the real picture

Part No :

BFR181E6327

Manufacturer
Rochester Electronics
Description
LOW-NOISE TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - RF
Availability
54000 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 21 - May 25 2024
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:8GHz
Noise Figure (dB Typ @ f):0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain:18.5dB
Power - Max:175mW
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 8V
Current - Collector (Ic) (Max):20mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
BFR181E6327 is available at GangBo-ic.com, Please review product page below for detailed information, including BFR181E6327 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BFR181E6327 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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