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MT3S20P(TE12L,F)

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MT3S20P(TE12L,F)

MT3S20P(TE12L,F)

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Part No :

MT3S20P(TE12L,F)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
RF TRANS NPN 12V 7GHZ PW-MINI
Catalog
Transistors - Bipolar (BJT) - RF
Availability
10460 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 21 - May 25 2024
PDF
MT3S20P(TE12L,F) PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:7GHz
Noise Figure (dB Typ @ f):1.45dB @ 1GHz
Gain:16.5dB
Power - Max:1.8W
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 50mA, 5V
Current - Collector (Ic) (Max):80mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PW-MINI
MT3S20P(TE12L,F) is available at GangBo-ic.com, Please review product page below for detailed information, including MT3S20P(TE12L,F) price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MT3S20P(TE12L,F) to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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  • MT3S20P(TE12L,F) Price
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