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HSG1002VE-TL-E

HSG1002VE-TL-E

RF 0.035A C BAND GERMANIUM NPN

HSG1002VE-TL-E

HSG1002VE-TL-E

Image is for reference, please contact us to get the real picture

Part No :

HSG1002VE-TL-E

Manufacturer
Rochester Electronics
Description
RF 0.035A C BAND GERMANIUM NPN
Catalog
Transistors - Bipolar (BJT) - RF
Availability
519687 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 25 - May 29 2025
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):3.5V
Frequency - Transition:38GHz
Noise Figure (dB Typ @ f):0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain:8dB ~ 19.5dB
Power - Max:200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 5mA, 2V
Current - Collector (Ic) (Max):35mA
Operating Temperature:-
Mounting Type:Surface Mount
Package / Case:4-SMD, Gull Wing
Supplier Device Package:4-MFPAK
HSG1002VE-TL-E is available at GangBo-ic.com, Please review product page below for detailed information, including HSG1002VE-TL-E price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for HSG1002VE-TL-E to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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