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NSVMUN5131T1G

NSVMUN5131T1G

SMALL SIGNAL BIPOLAR TRANSISTOR,

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NSVMUN5131T1G

NSVMUN5131T1G

Image is for reference, please contact us to get the real picture

Part No :

NSVMUN5131T1G

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL BIPOLAR TRANSISTOR,
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
111000 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 26 - May 30 2025
PDF
NSVMUN5131T1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:8 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:202 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
NSVMUN5131T1G is available at GangBo-ic.com, Please review product page below for detailed information, including NSVMUN5131T1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NSVMUN5131T1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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