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RN1306,LF

RN1306,LF

TRANS PREBIAS NPN 50V 0.1A USM

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RN1306,LF

RN1306,LF

Image is for reference, please contact us to get the real picture

Part No :

RN1306,LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS PREBIAS NPN 50V 0.1A USM
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
102710 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 10 - Jun 14 2025
PDF
RN1306,LF PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:250 MHz
Power - Max:100 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:USM
RN1306,LF is available at GangBo-ic.com, Please review product page below for detailed information, including RN1306,LF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RN1306,LF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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