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PDTC114EM,315

PDTC114EM,315

Image is for reference, please contact us to get the real picture

Part No :

PDTC114EM,315

Manufacturer
Rochester Electronics
Description
NPN RESISTOR-EQUIPPED TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
553055 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 22 - Jul 26 2025
PDF
PDTC114EM,315 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:-
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:SC-101, SOT-883
Supplier Device Package:DFN1006-3
PDTC114EM,315 is available at GangBo-ic.com, Please review product page below for detailed information, including PDTC114EM,315 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for PDTC114EM,315 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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