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NSVDTA114EET1G

NSVDTA114EET1G

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NSVDTA114EET1G

NSVDTA114EET1G

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Part No :

NSVDTA114EET1G

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL BIPOLAR TRANSISTOR,
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
21000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 05 - Nov 09 2025
PDF
NSVDTA114EET1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75, SOT-416
NSVDTA114EET1G is available at GangBo-ic.com, Please review product page below for detailed information, including NSVDTA114EET1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NSVDTA114EET1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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