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MJD253-1G

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MJD253-1G

MJD253-1G

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Part No :

MJD253-1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS PNP 100V 4A IPAK
Catalog
Transistors - Bipolar (BJT) - Single
Availability
10816 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 08 - Nov 12 2025
PDF
MJD253-1G PDF
Type Description
Series:-
Package:Tube
Part Status:Active
Transistor Type:PNP
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 100mA, 1A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 200mA, 1V
Power - Max:1.4 W
Frequency - Transition:40MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:I-PAK
MJD253-1G is available at GangBo-ic.com, Please review product page below for detailed information, including MJD253-1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MJD253-1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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