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IGB03N120H2ATMA1616

IGB03N120H2ATMA1616

POWER BIPOLAR TRANSISTOR

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IGB03N120H2ATMA1616

IGB03N120H2ATMA1616

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Part No :

IGB03N120H2ATMA1616

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Single
Availability
823182 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 27 - Oct 31 2025
Type Description
Series:*
Package:Bulk
Part Status:Active
Transistor Type:-
Current - Collector (Ic) (Max):-
Voltage - Collector Emitter Breakdown (Max):-
Vce Saturation (Max) @ Ib, Ic:-
Current - Collector Cutoff (Max):-
DC Current Gain (hFE) (Min) @ Ic, Vce:-
Power - Max:-
Frequency - Transition:-
Operating Temperature:-
Mounting Type:-
Package / Case:-
Supplier Device Package:-
IGB03N120H2ATMA1616 is available at GangBo-ic.com, Please review product page below for detailed information, including IGB03N120H2ATMA1616 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IGB03N120H2ATMA1616 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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