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NTLGD3502NT1G

NTLGD3502NT1G

N-CHANNEL POWER MOSFET

NTLGD3502NT1G

NTLGD3502NT1G

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Part No :

NTLGD3502NT1G

Manufacturer
Rochester Electronics
Description
N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
14990 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 17 - May 21 2024
PDF
NTLGD3502NT1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:4.3A, 3.6A
Rds On (Max) @ Id, Vgs:60mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:480pF @ 10V
Power - Max:1.74W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-VDFN Exposed Pad
Supplier Device Package:6-DFN (3x3)
NTLGD3502NT1G is available at GangBo-ic.com, Please review product page below for detailed information, including NTLGD3502NT1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTLGD3502NT1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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