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BSM180D12P3C007

BSM180D12P3C007

SIC POWER MODULE

BSM180D12P3C007

BSM180D12P3C007

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Part No :

BSM180D12P3C007

Manufacturer
ROHM Semiconductor
Description
SIC POWER MODULE
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
788978 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2024
PDF
BSM180D12P3C007 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:900pF @ 10V
Power - Max:880W
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:Module
Supplier Device Package:Module
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