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BSG0810NDIATMA1

BSG0810NDIATMA1

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Part No :

BSG0810NDIATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 25V 19A/39A 8TISON
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
619361 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 02 - Jun 06 2024
PDF
BSG0810NDIATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:19A, 39A
Rds On (Max) @ Id, Vgs:3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1040pF @ 12V
Power - Max:2.5W
Operating Temperature:-55°C ~ 155°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:PG-TISON-8
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