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BSG0810NDIATMA1

BSG0810NDIATMA1

MOSFET 2N-CH 25V 19A/39A 8TISON

NCP303LSN41T1

NCP303LSN41T1

IC SUPERVISOR PWR SUP SUPPORT

BSG0810NDIATMA1

BSG0810NDIATMA1

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Part No :

BSG0810NDIATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 25V 19A/39A 8TISON
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
619361 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 02 - Nov 06 2024
PDF
BSG0810NDIATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:19A, 39A
Rds On (Max) @ Id, Vgs:3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1040pF @ 12V
Power - Max:2.5W
Operating Temperature:-55°C ~ 155°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:PG-TISON-8
BSG0810NDIATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSG0810NDIATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSG0810NDIATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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