Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4.8A (Ta) |
Rds On (Max) @ Id, Vgs: | 33mOhm @ 6.2A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 16V |
Power - Max: | 750mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF7329TRPBFIR (Infineon Technologies) |
MOSFET 2P-CH 12V 9.2A 8-SOIC |
|
NVTFS4823NTWGRochester Electronics |
13A, 30V, 0.0175OHM, N-CHANNEL, |
|
SLA5037Sanken Electric Co., Ltd. |
MOSFET 4N-CH 100V 10A 12SIP |
|
EMH2409-TL-HRochester Electronics |
SMALL SIGNAL FET |
|
IXFN130N90SKWickmann / Littelfuse |
SICARBIDE-DISCRETE MOSFET SOT-22 |
|
SH8K51GZETBROHM Semiconductor |
4V DRIVE NCH+NCH MOSFET. SH8K51 |
|
ALD1101ASALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
CSD88584Q5DCTexas Instruments |
MOSFET 2 N-CH 40V 22-VSON-CLIP |
|
IRF9952QPBFRochester Electronics |
P-CHANNEL POWER MOSFET |
|
FDG6335NSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 0.7A SOT-363 |
|
NVDD5894NLT4GRochester Electronics |
N-CHANNEL, MOSFET |
|
SFS9630YDTUAS001Rochester Electronics |
TRANS MOSFET P-CH 200V 4.4A 3PIN |
|
NTJD4401NT2Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |