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SI4200DY-T1-GE3

SI4200DY-T1-GE3

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Part No :

SI4200DY-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 25V 8A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
937993 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 08 - May 12 2025
PDF
SI4200DY-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:8A
Rds On (Max) @ Id, Vgs:25mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:415pF @ 13V
Power - Max:2.8W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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