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APTM100H80FT1G

APTM100H80FT1G

MOSFET 4N-CH 1000V 11A SP1

APTM100H80FT1G

APTM100H80FT1G

Image is for reference, please contact us to get the real picture

Part No :

APTM100H80FT1G

Manufacturer
Microsemi
Description
MOSFET 4N-CH 1000V 11A SP1
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
757675 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 12 - Jun 16 2025
PDF
APTM100H80FT1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:4 N-Channel (H-Bridge)
FET Feature:Standard
Drain to Source Voltage (Vdss):1000V (1kV)
Current - Continuous Drain (Id) @ 25°C:11A
Rds On (Max) @ Id, Vgs:960mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:3876pF @ 25V
Power - Max:208W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:SP1
Supplier Device Package:SP1
APTM100H80FT1G is available at GangBo-ic.com, Please review product page below for detailed information, including APTM100H80FT1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for APTM100H80FT1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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