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APTM10DHM09T3G

APTM10DHM09T3G

MOSFET 2N-CH 100V 139A SP3

APTM10DHM09T3G

APTM10DHM09T3G

Image is for reference, please contact us to get the real picture

Part No :

APTM10DHM09T3G

Manufacturer
Microsemi
Description
MOSFET 2N-CH 100V 139A SP3
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
397739 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 10 - May 14 2025
Type Description
Series:POWER MOS V®
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Standard
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:139A
Rds On (Max) @ Id, Vgs:10mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id:4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:9875pF @ 25V
Power - Max:390W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:SP3
Supplier Device Package:SP3
APTM10DHM09T3G is available at GangBo-ic.com, Please review product page below for detailed information, including APTM10DHM09T3G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for APTM10DHM09T3G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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