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ELUA3535NU3-P6070U23648700-V41G

ELUA3535NU3-P6070U23648700-V41G

UVA 3535 PACKAGE, 4W, 30 DEGREE

FDFME2P823ZT

FDFME2P823ZT

2.6A, 20V, P-CHANNEL MOSFET

5281

5281

TEST CLIP PLCC 44 (4 X 11)

TCET4600G

TCET4600G

OPTOISO 5.3KV 4CH TRANS 16DIP

FDFME2P823ZT

FDFME2P823ZT

Image is for reference, please contact us to get the real picture

Part No :

FDFME2P823ZT

Manufacturer
Rochester Electronics
Description
2.6A, 20V, P-CHANNEL MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
40000 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 06 - May 10 2025
PDF
FDFME2P823ZT PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:142mOhm @ 2.3A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.7 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:405 pF @ 10 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-MicroFET (1.6x1.6)
Package / Case:6-UFDFN Exposed Pad
FDFME2P823ZT is available at GangBo-ic.com, Please review product page below for detailed information, including FDFME2P823ZT price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDFME2P823ZT to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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