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FQU2N100TU

FQU2N100TU

MOSFET N-CH 1000V 1.6A IPAK

FQU2N100TU

FQU2N100TU

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Part No :

FQU2N100TU

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 1000V 1.6A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11147 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 10 - Jun 14 2024
PDF
FQU2N100TU PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:520 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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