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RQ1A060ZPTR

RQ1A060ZPTR

MOSFET P-CH 12V 6A TSMT8

RQ1A060ZPTR

RQ1A060ZPTR

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Part No :

RQ1A060ZPTR

Manufacturer
ROHM Semiconductor
Description
MOSFET P-CH 12V 6A TSMT8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
47503 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 12 - Jun 16 2024
PDF
RQ1A060ZPTR PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:23mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:2800 pF @ 6 V
FET Feature:-
Power Dissipation (Max):700mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TSMT8
Package / Case:8-SMD, Flat Lead
RQ1A060ZPTR is available at GangBo-ic.com, Please review product page below for detailed information, including RQ1A060ZPTR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RQ1A060ZPTR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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