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NTD3808NT4G

NTD3808NT4G

MOSFET N-CH 16V 12A/76A DPAK

NTD3808NT4G

NTD3808NT4G

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Part No :

NTD3808NT4G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 16V 12A/76A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
60000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 03 - Jun 07 2024
PDF
NTD3808NT4G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):16 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1.66 pF @ 12 V
FET Feature:-
Power Dissipation (Max):1.3W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
NTD3808NT4G is available at GangBo-ic.com, Please review product page below for detailed information, including NTD3808NT4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTD3808NT4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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