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IRFBC30SPBF

IRFBC30SPBF

Image is for reference, please contact us to get the real picture

Part No :

IRFBC30SPBF

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 600V 3.6A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
102110 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 20 - May 24 2024
PDF
IRFBC30SPBF PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.2Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 74W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFBC30SPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFBC30SPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFBC30SPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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