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NTE2973

NTE2973

MOSFET-N-CHAN ENHANCEMENT TO-3P

NTE2973

NTE2973

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Part No :

NTE2973

Manufacturer
NTE Electronics, Inc.
Description
MOSFET-N-CHAN ENHANCEMENT TO-3P
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10226 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 03 - Jun 07 2024
Type Description
Series:-
Package:Bag
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2.9 pF @ 25 V
FET Feature:-
Power Dissipation (Max):275W (Tc)
Operating Temperature:-55°C ~ 150°C
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
NTE2973 is available at GangBo-ic.com, Please review product page below for detailed information, including NTE2973 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTE2973 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

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