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IRFHM8334TRPBF

IRFHM8334TRPBF

MOSFET N-CH 30V 13A/43A 8PQFN DL

IRFHM8334TRPBF

IRFHM8334TRPBF

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Part No :

IRFHM8334TRPBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 13A/43A 8PQFN DL
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12773 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 17 - Jun 21 2024
PDF
IRFHM8334TRPBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1180 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2.7W (Ta), 28W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN-Dual (3.3x3.3), Power33
Package / Case:8-PowerVDFN
IRFHM8334TRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFHM8334TRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFHM8334TRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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