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BSB013NE2LXIXUMA1

BSB013NE2LXIXUMA1

MOSFET N-CH 25V 36A/163A 2WDSON

SCH1330-TL-H

SCH1330-TL-H

MOSFET P-CH 20V 1.5A 6SCH

608283304845002

608283304845002

WIRE TO BOARD

BSB013NE2LXIXUMA1

BSB013NE2LXIXUMA1

Image is for reference, please contact us to get the real picture

Part No :

BSB013NE2LXIXUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 36A/163A 2WDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
18819 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 03 - Jun 07 2024
PDF
BSB013NE2LXIXUMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:36A (Ta), 163A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4400 pF @ 12 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 57W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MG-WDSON-2, CanPAK M™
Package / Case:3-WDSON
BSB013NE2LXIXUMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSB013NE2LXIXUMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSB013NE2LXIXUMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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