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RM6N800HD

MOSFET N-CHANNEL 800V 6A TO263-2

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RM6N800HD

RM6N800HD

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Part No :

RM6N800HD

Manufacturer
Rectron USA
Description
MOSFET N-CHANNEL 800V 6A TO263-2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
843984 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 08 - Oct 12 2025
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1320 pF @ 50 V
FET Feature:-
Power Dissipation (Max):98W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RM6N800HD is available at GangBo-ic.com, Please review product page below for detailed information, including RM6N800HD price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM6N800HD to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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