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FDP8D5N10C

FDP8D5N10C

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Part No :

FDP8D5N10C

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 76A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
455545 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 08 - May 12 2025
PDF
FDP8D5N10C PDF
Type Description
Series:PowerTrench®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:76A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.5mOhm @ 76A, 10V
Vgs(th) (Max) @ Id:4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2475 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2.4W (Ta), 107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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