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IPD80R1K4P7ATMA1

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IPD80R1K4P7ATMA1

IPD80R1K4P7ATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPD80R1K4P7ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 800V 4A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11872 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 13 - May 17 2025
PDF
IPD80R1K4P7ATMA1 PDF
Type Description
Series:CoolMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id:3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 500 V
FET Feature:Super Junction
Power Dissipation (Max):32W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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