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SI8816EDB-T2-E1

SI8816EDB-T2-E1

Image is for reference, please contact us to get the real picture

Part No :

SI8816EDB-T2-E1

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 4MICROFOOT
Catalog
Transistors - FETs, MOSFETs - Single
Availability
31728 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 20 - May 24 2025
PDF
SI8816EDB-T2-E1 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:109mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:195 pF @ 15 V
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-Microfoot
Package / Case:4-XFBGA
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