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RQ6E080AJTCR

RQ6E080AJTCR

MOSFET N-CH 30V 8A TSMT6

RQ6E080AJTCR

RQ6E080AJTCR

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Part No :

RQ6E080AJTCR

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 30V 8A TSMT6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12442 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 12 - Jun 16 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:16.5mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:16.2 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1810 pF @ 15 V
FET Feature:-
Power Dissipation (Max):950mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TSMT6 (SC-95)
Package / Case:SOT-23-6 Thin, TSOT-23-6
RQ6E080AJTCR is available at GangBo-ic.com, Please review product page below for detailed information, including RQ6E080AJTCR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RQ6E080AJTCR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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