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IPD50P03P4L11ATMA2

IPD50P03P4L11ATMA2

MOSFET P-CH 30V 50A TO252-31

IPD50P03P4L11ATMA2

IPD50P03P4L11ATMA2

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Part No :

IPD50P03P4L11ATMA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 30V 50A TO252-31
Catalog
Transistors - FETs, MOSFETs - Single
Availability
767676 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 17 - May 21 2024
Type Description
Series:Automotive, AEC-Q101, OptiMOS®-P2
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:10.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds:3770 pF @ 25 V
FET Feature:-
Power Dissipation (Max):58W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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