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IPW65R029CFD7XKSA1

IPW65R029CFD7XKSA1

MOSFET N-CH 650V 69A TO247-3

SST25VF040B-80-4I-S2AE

SST25VF040B-80-4I-S2AE

IC FLASH 4MBIT SPI 80MHZ 8SOIC

IPW65R029CFD7XKSA1

IPW65R029CFD7XKSA1

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Part No :

IPW65R029CFD7XKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 69A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
018301 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 17 - May 21 2024
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:69A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:29mOhm @ 35.8A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.79mA
Gate Charge (Qg) (Max) @ Vgs:145 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7149 pF @ 400 V
FET Feature:-
Power Dissipation (Max):305W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
IPW65R029CFD7XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPW65R029CFD7XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPW65R029CFD7XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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