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R6009ENJTL

R6009ENJTL

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Part No :

R6009ENJTL

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 600V 9A LPTS
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10740 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 20 - May 24 2025
PDF
R6009ENJTL PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:535mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:430 pF @ 25 V
FET Feature:-
Power Dissipation (Max):40W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LPTS
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
R6009ENJTL is available at GangBo-ic.com, Please review product page below for detailed information, including R6009ENJTL price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for R6009ENJTL to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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