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IAUT150N10S5N035ATMA1

IAUT150N10S5N035ATMA1

MOSFET N-CH 100V 150A 8HSOF

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IAUT150N10S5N035ATMA1

IAUT150N10S5N035ATMA1

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Part No :

IAUT150N10S5N035ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 150A 8HSOF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11943 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 30 - Jun 03 2024
PDF
IAUT150N10S5N035ATMA1 PDF
Type Description
Series:OptiMOS™-5
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:150A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:3.8V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:87 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6110 pF @ 50 V
FET Feature:-
Power Dissipation (Max):166W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-1
Package / Case:8-PowerSFN
IAUT150N10S5N035ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IAUT150N10S5N035ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IAUT150N10S5N035ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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