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FDV302P

FDV302P

Image is for reference, please contact us to get the real picture

Part No :

FDV302P

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL FIELD-EFFECT TRANSI
Catalog
Transistors - FETs, MOSFETs - Single
Availability
109510 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 15 - May 19 2025
PDF
FDV302P PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
Rds On (Max) @ Id, Vgs:10Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.31 nC @ 4.5 V
Vgs (Max):-8V
Input Capacitance (Ciss) (Max) @ Vds:11 pF @ 10 V
FET Feature:-
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
FDV302P is available at GangBo-ic.com, Please review product page below for detailed information, including FDV302P price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDV302P to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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